Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208122

Siebke, F; Stiebig, H; Abo-Arais, A; Wagner, H ^[1]

---

1. Forschungszentrum Juelich GmbH (Germany). Inst. of Thin Film and Ion Technology

A numerical model has been developed to simulate constant photocurrent method spectra. It takes into account the full set of optical transitions between localized and extended states under sub-bandgap illumination, capture, emission and recombination processes as well as the energetic position of the Fermi level. In order to obtain information about the density of localized gap states in a-Si:H, i.e. the valence band tail, the integrated defect density, the energetic defect distribution, and the charge state of the defect states the authors compare simulated and measured spectra. In the annealed state the defect absorption of undoped, n- and p-type a-Si:H is dominated by a charged defect states. In undoped material the defect density increases upon light soaking but the charged-to-neutral defect ratio does not change.

• OSTI ID: 208122
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CHARGE STATES
CRYSTAL DEFECTS
ENERGY-LEVEL TRANSITIONS
MATHEMATICAL MODELS
PHOTOCURRENTS
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS