Growth of epitaxial CdTe/CdS heterostructures for single crystal thin film solar cell applications
- Swiss Federal Inst. of Tech., Zuerich (Switzerland). Arbeitsgemeinschaft fuer Industrielle Forschung
Epitaxial CdTe/CdS heterostructures have been grown by molecular beam epitaxy onto BaF{sub 2} covered Si (111) substrates. An epitaxial BaF{sub 2} buffer is used for compatibility reasons, and because of easier dissolution during the lift-off processing. Epitaxy of cubic CdS (111) layers on BaF{sub 2}/Si (111) is achieved; electron channeling patterns exhibit a three-fold symmetry which is a characteristic for cubic crystal structures. The growth kinetics and structural properties of epitaxial CdS and CdTe/CdS have been studied with reflection high energy electron diffraction, Rutherford backscattering spectrometry and X-ray diffraction rocking curve measurements.the full width at half maximum of the (222) CdS and (333) CdTe X-ray peaks are {approximately} 1,150 arc sec for 2.7 and 3.4 {micro}m thick CdS and CdTe layers, respectively. To fabricate CdTe/CdS single crystal thin film solar cells, a lift-off process has been developed to remove the epitaxial layers from the Si substrates.
- OSTI ID:
- 208071
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%399
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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