Characterization of Cu-In-Ga precursors used to form Cu(In,Ga)Se{sub 2} films
Book
·
OSTI ID:208051
- Univ. of Delaware, Newark, DE (United States)
The stacked precursors for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} were processed in sequences Cu/In/Ga and Cu/Ga/In for Ga/(Ga+In) ratio ranging from 0.2 to 1.0. The precursors, before and after a 1 hour heat treatment in an Ar atmosphere were found to contain only elemental and binary phases. The precursors were reacted with H{sub 2}Se or elemental Se at 400 C and 500 C. Reacted precursors contained mixtures of binary phases Cu{sub 2{minus}x}Se, GaSe, Ga{sub 2}Se{sub 3} and Cu-Ga, and, ternary phases CuInSe{sub 2} and CuGaSe{sub 2}. The reacted precursors were heated treated in an Ar atmosphere and an H{sub 2}Se atmosphere. The heat treatment in an Ar atmosphere resulted in a single phase CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} film, whereas, heat treatment in H{sub 2}Se atmosphere improved only the crystallinity of the phases present and does not effect homogenization.
- OSTI ID:
- 208051
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Phases, morphology, and diffusion in CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films
Improved selenization procedure to obtain CuInSe{sub 2} thin films from sequentially electrodeposited precursors
Structure, chemistry, and growth mechanisms of photovoltaic quality thin-film Cu(In,Ga)Se[sub 2] grown from a mixed-phase precursor
Journal Article
·
Mon Sep 01 00:00:00 EDT 1997
· Journal of Applied Physics
·
OSTI ID:542156
Improved selenization procedure to obtain CuInSe{sub 2} thin films from sequentially electrodeposited precursors
Journal Article
·
Wed Jan 31 23:00:00 EST 1996
· Journal of the Electrochemical Society
·
OSTI ID:212154
Structure, chemistry, and growth mechanisms of photovoltaic quality thin-film Cu(In,Ga)Se[sub 2] grown from a mixed-phase precursor
Journal Article
·
Sat Dec 31 23:00:00 EST 1994
· Journal of Applied Physics; (United States)
·
OSTI ID:6720854