Characterization of Cu-In-Ga precursors used to form Cu(In,Ga)Se{sub 2} films
- Univ. of Delaware, Newark, DE (United States)
The stacked precursors for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} were processed in sequences Cu/In/Ga and Cu/Ga/In for Ga/(Ga+In) ratio ranging from 0.2 to 1.0. The precursors, before and after a 1 hour heat treatment in an Ar atmosphere were found to contain only elemental and binary phases. The precursors were reacted with H{sub 2}Se or elemental Se at 400 C and 500 C. Reacted precursors contained mixtures of binary phases Cu{sub 2{minus}x}Se, GaSe, Ga{sub 2}Se{sub 3} and Cu-Ga, and, ternary phases CuInSe{sub 2} and CuGaSe{sub 2}. The reacted precursors were heated treated in an Ar atmosphere and an H{sub 2}Se atmosphere. The heat treatment in an Ar atmosphere resulted in a single phase CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} film, whereas, heat treatment in H{sub 2}Se atmosphere improved only the crystallinity of the phases present and does not effect homogenization.
- OSTI ID:
- 208051
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%379
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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