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Improved selenization procedure to obtain CuInSe{sub 2} thin films from sequentially electrodeposited precursors

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/1.1836470· OSTI ID:212154
;  [1]
  1. CIEMAT, Madrid (Spain). Inst. de Energias Renovables
A new approach for CuInSe{sub 2} formation by sequential electrodeposition of Cu and In-Se layers and subsequent heat-treatment with elemental selenium in Ar and Ar + H{sub 2} flows is presented. The nature of the precursors and their evolution as a function of the selenization parameters have been studied by X-ray diffraction and X-ray photoelectron spectroscopy analysis. Sample temperature, Se-source temperature, and H{sub 2}/Ar volume ratio in the flow were the subject for optimization. A sample temperature above 400 C is needed to obtain single-phase CuInSe{sub 2} films. An increase in the film crystallinity has been reached by maintaining the Se-source temperature above 400 C. The introduction of H{sub 2} in the selenizing atmosphere has proven to be unsuitable, H{sub 2}Se formation must be avoided because it is more poisonous and less reactive than the elemental selenium vapor.
Sponsoring Organization:
USDOE
OSTI ID:
212154
Journal Information:
Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 2 Vol. 143; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English

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