Growth studies of CuInSe{sub 2} using Cu-Se fluxes
Conference
·
OSTI ID:208050
- Univ. Gent (Belgium). Vakgroep voor Elektronica en Informatiesystemen
The latest developments in CIGS/CdS/ZnO cells show the importance of understanding the growth mechanisms of the absorber layer. For this purpose the authors studied the influence of Cu, CuSe, Cu{sub 2}Se and Se as additives to a CuInSe{sub 2} base material. They found that in a selenium rich atmosphere the copper rich phase forms CuSe, which acts as a flux in a liquid phase sintering process (above its melting temperature of 523 C). Testing their findings to the selenization of glass/Mo/In(Se)/Cu structures lead to marked grain growth with grains up to 20 {micro}m.
- OSTI ID:
- 208050
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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