Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

Journal Article · Thu Jun 01 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2200768· OSTI ID:20795830

Abouzaid, M; Ruterana, P; Liu, C; Morkoc, H ^[1]

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1. SIFCOM UMR 6176 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France)

The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetron sputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5 {mu}m Mn-doped layer towards the surface on top of a 150 nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90 deg. , putting [1010] and [1120] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500 deg. C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations.

• OSTI ID: 20795830
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL ANALYSIS
CRYSTAL GROWTH
DEPOSITION
DISLOCATIONS
DOPED MATERIALS
FERROMAGNETIC MATERIALS
GALLIUM NITRIDES
LAYERS
MANGANESE
OPTIMIZATION
PRECIPITATION
RADIOWAVE RADIATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES