Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

Journal Article · Wed Aug 15 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2773637· OSTI ID:21057503

Liu, H F; Chua, S J; Hu, G X; Gong, H; Xiang, N ^[1]

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1. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)

The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al{sub 2}O{sub 3}(0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al{sub 2}O{sub 3} (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N{sub 2} and O{sub 2} ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects.

• OSTI ID: 21057503
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ALUMINIUM OXIDES
ANNEALING
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
GALLIUM ARSENIDES
GRAIN ORIENTATION
INTERSTITIALS
OXIDATION
OXYGEN
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
VACANCIES
X-RAY DIFFRACTION
ZINC OXIDES