Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7x7

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2150598· OSTI ID:20787790

Sadowski, J T; Nagao, T; Yaginuma, S; Fujikawa, Y; Sakurai, T; Oreshkin, A; Saito, M; Ohno, T ^[1]

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1. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

We discuss the results of the scanning tunneling microscopy (STM) investigations and ab initio calculations of the structure and stability of the quasicubic Bi(012) film formed in the initial stage of the bismuth deposition on the Si(111)-7x7 surface at room temperature. Results of our STM experiments show that paired-layer Bi(012) film grows on top of the initially formed wetting layer, with the Si 7x7 lattice preserved underneath. The pairing of the layers in the (012) film leads to the substantial stabilization of the film when it consists of an even number of layers and only even-number layered Bi(012) islands are observed to be stable. The buckling of the atoms in the topmost paired layer induced by the relaxation of the film is evidenced by the high-resolution STM images.

• OSTI ID: 20787790
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH
CRYSTAL GROWTH
DEPOSITION
LAYERS
RELAXATION
SCANNING TUNNELING MICROSCOPY
SILICON
STABILITY
STABILIZATION
TEMPERATURE RANGE 0273-0400 K
THIN FILMS