Determination of the absolute fluence profile in pulsed laser processing using melt-induced phase changes in an amorphous silicon thin film
Journal Article
·
· Review of Scientific Instruments
- Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States)
A simple silicon-based thin film multilayer configuration is used to obtain measurements of beam profiles in a pulsed excimer projection system with fluence levels similar to melt-mediated materials processing. Abrupt transitions between amorphous and polycrystalline phases are found at the onset of melting, and at the attainment of complete melting in a thin silicon film encapsulated between SiO{sub 2} layers. When combined with a standard technique for absolute determination of fluence under flood irradiation using bulk melting of silicon, a device for measurement of the two-dimensional absolute fluence profile is realized. With this technique fluence profiles can be estimated within {+-}25 mJ/cm{sup 2} at a lateral spatial resolution of 0.5 {mu}m.
- OSTI ID:
- 20779360
- Journal Information:
- Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 5 Vol. 77; ISSN 0034-6748; ISSN RSINAK
- Country of Publication:
- United States
- Language:
- English
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