Transient temperature measurement of amorphous silicon thin films during excimer laser annealing
Conference
·
OSTI ID:20002424
Excimer laser annealing of amorphous silicon thin films has been investigated using optical diagnostics. Amorphous silicon films of 50 nm thickness are used in laser annealing. To obtain the transient temperature variation in the laser annealing process, thermal emission and near-infrared optical properties are measured. Front side transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 {micro}m wavelength of the IRHeNe laser. Significant supercooling of liquid silicon is observed during the cooling stage. The emissivity remains almost constant when the melt thickness exceeds the absorption depth in liquid silicon, but attains maxima during the initial melting and final solidification periods. This variation can be correspondingly attributed to the interference effect from the growth of the liquid silicon film and the grain growth in the liquid pool.
- Research Organization:
- Univ. of California, Berkeley, CA (US)
- OSTI ID:
- 20002424
- Report Number(s):
- CONF-990805--
- Country of Publication:
- United States
- Language:
- English
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