Excimer laser crystallization of hydrogenated amorphous silicon

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:536334

Yongbing, Dai; Zhongyang, Xu; Changan, Wang; Shaoqiang, Zhang; Chengwu, An; Xingjiao, Li; Xinheng, Wan; Hui, Ding ^[1]

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1. Huazhong Univ. of Science and Technology, Wuhan (China). Dept. of Solid State Electronics

Hydrogenated amorphous silicon (a-Si:H) films have been crystallized by the irradiations of XeCl excimer laser. The crystallized films have been examined by scanning electron microscopy (SEM), x-ray diffraction (XRD) and conductivity measurements to clarify their morphologies, structure and electrical properties. The results show that a high conductive super thin layer is formed by a single pulse laser irradiation with the energy density of 75mJ/cm{sup 2}. The conductivity increases quickly at laser energy density threshold which decreases when the hydrogen in a-Si:H films is removed by pre-annealing. During crystallization process, oxygen atoms from the air ambient have been introduced into the films and such an introducing process is hindered by the hydrogen eruption. When the oxygen content is high enough, the carrier-transport mechanism includes thermionic emission (TE) and thermionic field emission (TFE) in the vicinity of room temperature, which is similar to semi-insulating polycrystalline silicon (SIPOS).

• OSTI ID: 536334
• Report Number(s): CONF-9611124--; ISBN 0-8194-2289-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CRYSTALLIZATION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
HYDROGENATION
LASER RADIATION
SILICON
SURFACE PROPERTIES