Laser-assisted transfer of silicon by explosive hydrogen release

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123790· OSTI ID:341181

Toet, D ^[1]; Thompson, M O ^[2]; Smith, P M; Sigmon, T W ^[1]

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1. Lawrence Livermore National Laboratory, L-271, 7000 East Avenue, Livermore, California 94550 (United States)
2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)

We present a technique for the transfer of silicon thin films. This transfer is effected by irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate with an excimer laser pulse. The resulting release and accumulation of hydrogen at the film/substrate interface generates pressures sufficient to propel the silicon onto an adjacent glass receptor wafer. Transient optical transmission measurements indicate that the amorphous film is melted by the laser pulse and breaks into droplets during ejection. For fluences above 400&hthinsp;mJ/cm{sup 2}, the transferred films adhere well to the receptors and can be smoothed using a second laser irradiation. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 341181
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ADHESION
AMORPHOUS STATE
HYDROGEN
LASER RADIATION
LIGHT TRANSMISSION
MASS TRANSFER
MELTING
RADIATION EFFECTS
SILICON
THIN FILMS