Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

Journal Article · Mon May 29 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2208928· OSTI ID:20779352

Usami, N; Nose, Y; Fujiwara, K; Nakajima, K ^[1]

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1. Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

We attempted to utilize homemade SiGe bulk crystal as a substrate for epitaxy of strain-controlled heterostructures. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed a dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance.

• OSTI ID: 20779352
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTALS
GERMANIUM ALLOYS
GERMANIUM SILICIDES
LAYERS
MAPPING
MOLECULAR BEAM EPITAXY
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
STRESSES
SUBSTRATES
THIN FILMS