On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

Journal Article · Mon Aug 23 04:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1784036· OSTI ID:20632738

Kutsukake, Kentaro; Usami, Noritaka; Ujihara, Toru; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo ^[1]

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1. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

We investigated the microscopic strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates, and clarified the origins of the strain fluctuation in the strained-Si film. A periodic strain fluctuation, which reflects a cross-hatch pattern of the substrate, was observed in the sample on the virtual substrate. On the other hand, a featureless strain fluctuation with suppressed amplitude was observed in the sample on SGOI substrate. By analyzing the correlation of the Raman peak positions of the Si-Si modes in strained-Si and SiGe, the dominant mechanism of the strain fluctuation in the strained Si film was found to be the compositional fluctuation in underlying SiGe for the sample on SGOI, and the strain fluctuation reflecting the cross-hatch pattern for the sample on the virtual substrate, respectively.

• OSTI ID: 20632738
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FLUCTUATIONS
GERMANIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PERIODICITY
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SILICON COMPOUNDS
STRAINS
SUBSTRATES
THIN FILMS