Straining of SiGe ultrathin films with mesoporous Si substrates

Journal Article · Mon Sep 27 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3494594· OSTI ID:21466936

Boucherif, A; Guillot, G; Lysenko, V ^[1]; Blanchard, N P; Regreny, P; Grenet, G ^[2]; Marty, O ^[3]

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1. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Universite de Lyon, Villeurbanne F-69621 (France)
2. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Universite de Lyon, Ecully F-69134 (France)
3. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Universite Lyon 1, Universite de Lyon, Villeurbanne F-69622 (France)

We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in the as grown monocrystalline (mc) SiGe. Applying this method to a 50 nm thick mc-Si{sub 0.72}Ge{sub 0.28} film, a tensile strain >0.78% can be achieved without compromising crystalline quality and up to 1.45 % without the appearance of cracks.

• OSTI ID: 21466936
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL REACTIONS
COMPRESSION STRENGTH
CRACKS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
EPITAXY
FABRICATION
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
MATERIALS
MECHANICAL PROPERTIES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OXIDATION
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON COMPOUNDS
STRAINS
STRESSES
SUBSTRATES
THIN FILMS