Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface
- CNR-INFM MDM National Laboratory, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy)
In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La{sub 2}Hf{sub 2}O{sub 7}, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6{+-}0.1 eV band gap of La{sub 2}Hf{sub 2}O{sub 7} is aligned to the band gap of silicon with a valence band offset of 2.4{+-}0.1 eV and a conduction band offset of 2.1{+-}0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV.
- OSTI ID:
- 20779310
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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