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Title: Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface

Abstract

In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La{sub 2}Hf{sub 2}O{sub 7}, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6{+-}0.1 eV band gap of La{sub 2}Hf{sub 2}O{sub 7} is aligned to the band gap of silicon with a valence band offset of 2.4{+-}0.1 eV and a conduction band offset of 2.1{+-}0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. CNR-INFM MDM National Laboratory, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy)
Publication Date:
OSTI Identifier:
20779310
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 88; Journal Issue: 20; Other Information: DOI: 10.1063/1.2204572; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; ENERGY GAP; HAFNIUM OXIDES; INTERFACES; LANTHANUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICON; SURFACE ENERGY; THIN FILMS; VALENCE

Citation Formats

Seguini, G, Spiga, S, Bonera, E, Fanciulli, M, Reyes Huamantinco, A, Foerst, C J, Ashman, C R, Bloechl, P E, Dimoulas, A, Mavrou, G, Institute for Theoretical Physics, Clausthal University of Technology, Leibnizstrasse 10, 38678 Clausthal-Zellerfeld, and MBE Laboratory, Institute of Materials Science, National Center for Scientific Research DEMOKRITOS, 153 10 Athens. Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface. United States: N. p., 2006. Web. doi:10.1063/1.2204572.
Seguini, G, Spiga, S, Bonera, E, Fanciulli, M, Reyes Huamantinco, A, Foerst, C J, Ashman, C R, Bloechl, P E, Dimoulas, A, Mavrou, G, Institute for Theoretical Physics, Clausthal University of Technology, Leibnizstrasse 10, 38678 Clausthal-Zellerfeld, & MBE Laboratory, Institute of Materials Science, National Center for Scientific Research DEMOKRITOS, 153 10 Athens. Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface. United States. doi:10.1063/1.2204572.
Seguini, G, Spiga, S, Bonera, E, Fanciulli, M, Reyes Huamantinco, A, Foerst, C J, Ashman, C R, Bloechl, P E, Dimoulas, A, Mavrou, G, Institute for Theoretical Physics, Clausthal University of Technology, Leibnizstrasse 10, 38678 Clausthal-Zellerfeld, and MBE Laboratory, Institute of Materials Science, National Center for Scientific Research DEMOKRITOS, 153 10 Athens. Mon . "Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface". United States. doi:10.1063/1.2204572.
@article{osti_20779310,
title = {Band alignment at the La{sub 2}Hf{sub 2}O{sub 7}/(001)Si interface},
author = {Seguini, G and Spiga, S and Bonera, E and Fanciulli, M and Reyes Huamantinco, A and Foerst, C J and Ashman, C R and Bloechl, P E and Dimoulas, A and Mavrou, G and Institute for Theoretical Physics, Clausthal University of Technology, Leibnizstrasse 10, 38678 Clausthal-Zellerfeld and MBE Laboratory, Institute of Materials Science, National Center for Scientific Research DEMOKRITOS, 153 10 Athens},
abstractNote = {In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La{sub 2}Hf{sub 2}O{sub 7}, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6{+-}0.1 eV band gap of La{sub 2}Hf{sub 2}O{sub 7} is aligned to the band gap of silicon with a valence band offset of 2.4{+-}0.1 eV and a conduction band offset of 2.1{+-}0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV.},
doi = {10.1063/1.2204572},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 88,
place = {United States},
year = {2006},
month = {5}
}