Silicon doped boron carbide nanorod growth via a solid-liquid-solid process

Journal Article · Mon Mar 27 04:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2190468· OSTI ID:20779152

Weiqiang, Han ^[1]

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1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)

Here we report the synthesis of silicon doped boron carbide (Si-doped B{sub 4}C) nanorods via a solid reaction using activated carbon, boron, and silicon powder as reactants. These nanorods have been studied by high-resolution transmission electron microscopy, scanning electron microscopy, electron energy loss spectroscopy, and energy-dispersive x-ray spectrometry. The diameter of Si-doped B{sub 4}C nanorods ranges from 15 to 70 nm. The length of Si-doped B{sub 4}C nanorods is up to 30 {mu}m. Ni{sub x}Co{sub y}B{sub z} nanoparticles are used as catalysts for the growth of Si-doped B{sub 4}C nanorods. A solid-liquid-solid growth mechanism is proposed.

• OSTI ID: 20779152
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATED CARBON
BORON ALLOYS
BORON CARBIDES
CATALYSTS
CHEMICAL ANALYSIS
COBALT ALLOYS
CRYSTAL GROWTH
DOPED MATERIALS
NANOSTRUCTURES
NICKEL ALLOYS
PARTICLES
POWDERS
SCANNING ELECTRON MICROSCOPY
SILICON
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY