Thermal stability of dopants in boron carbide

Du, Jun; Christian, Kent; Yang, Qirong; Hwang, Chawon; McAleer, Eoin; Haber, Richard A.

doi:10.1016/j.scriptamat.2021.114263

Thermal stability of dopants in boron carbide

Journal Article · Sat Sep 11 04:00:00 EDT 2021 · Scripta Materialia

DOI:https://doi.org/10.1016/j.scriptamat.2021.114263· OSTI ID:1829025

^[1]; ^[1]; Yang, Qirong ^[2]; Hwang, Chawon ^[1]; ^[1]; Haber, Richard A. ^[1]

Rutgers Univ., Piscataway, NJ (United States)
Rutgers Univ., Piscataway, NJ (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Undoped (B₄C), B rich (B_5.5C), and B/Si co-doped (Si-B_6.5C) boron carbides were annealed at 500 °C for up to 21 days to investigate the thermal stability of primary dopants, B and Si. Structural changes associated with dedoping were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stable phase B₄C showed no microstructural or lattice parameter changes. Similarly, lattice parameters of B_5.5C remained constant, suggesting that B dopant is stable at the given conditions. However, the shortened lattice parameters and reduced Si content of Si-B_6.5C over the annealing time indicated that Si dopant was in a metastable state at the annealing temperature. Consequently, Si dedoping led to an increase in amorphization (a loss of local crystalline order) which degrades the ballistic performance of boron carbide. The insight highlights the importance of Si dopant in boron carbide and suggests that rapid processing may be necessary to retain more silicon for better performance.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE; US Army Research Office (ARO); Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1829025

Alternate ID(s):: OSTI ID: 1819792

Report Number(s):: LLNL-JRNL--827572; 1040186

Journal Information:: Scripta Materialia, Journal Name: Scripta Materialia Journal Issue: na Vol. 206; ISSN 1359-6462

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Raman spectroscopy
annealing
boron/silicon
doped boron carbide
x-ray diffraction

Thermal stability of dopants in boron carbide

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