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Title: Ni doping of semiconducting boron carbide

Abstract

The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

Authors:
; ;  [1];  [2];  [3]
  1. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States)
  2. Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0304 (United States)
  3. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana 70806 (United States)
Publication Date:
OSTI Identifier:
21476115
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 107; Journal Issue: 2; Other Information: DOI: 10.1063/1.3284205; (c) 2010 American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON CARBIDES; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ENERGY GAP; NICKEL; N-TYPE CONDUCTORS; PLASMA; P-TYPE CONDUCTORS; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; DEPOSITION; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; MATERIALS; METALS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENTS

Citation Formats

Hong, Nina, Liu Jing, Adenwalla, S., Langell, M. A., and Kizilkaya, Orhan. Ni doping of semiconducting boron carbide. United States: N. p., 2010. Web. doi:10.1063/1.3284205.
Hong, Nina, Liu Jing, Adenwalla, S., Langell, M. A., & Kizilkaya, Orhan. Ni doping of semiconducting boron carbide. United States. doi:10.1063/1.3284205.
Hong, Nina, Liu Jing, Adenwalla, S., Langell, M. A., and Kizilkaya, Orhan. 2010. "Ni doping of semiconducting boron carbide". United States. doi:10.1063/1.3284205.
@article{osti_21476115,
title = {Ni doping of semiconducting boron carbide},
author = {Hong, Nina and Liu Jing and Adenwalla, S. and Langell, M. A. and Kizilkaya, Orhan},
abstractNote = {The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.},
doi = {10.1063/1.3284205},
journal = {Journal of Applied Physics},
number = 2,
volume = 107,
place = {United States},
year = 2010,
month = 1
}
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