Ni doping of semiconducting boron carbide

Journal Article · Fri Jan 15 04:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3284205· OSTI ID:21476115

Hong, Nina; Jing, Liu; Adenwalla, S ^[1]; Langell, M A ^[2]; Kizilkaya, Orhan ^[3]

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1. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States)
2. Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0304 (United States)
3. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana 70806 (United States)

The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

• OSTI ID: 21476115
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON CARBIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
DEPOSITION
DIMENSIONLESS NUMBERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY GAP
FILMS
MATERIALS
METALS
N-TYPE CONDUCTORS
NICKEL
P-TYPE CONDUCTORS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PLASMA
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS
X-RAY PHOTOELECTRON SPECTROSCOPY