Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition
- IFN-CNR, Istituto Fotonica e Nanotecnologie, ITC Division, 38050 Trento (Italy)
We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K{sub E}). The major role played by K{sub E} is in achieving highly ordered and flat films. In the range K{sub E}{approx_equal}3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor {approx}5. The highest value (1.0 cm{sup 2} V{sup -1} s{sup -1}) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K{sub E}>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K{sub E}{<=}5.5 eV.
- OSTI ID:
- 20779144
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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