Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)
- Department of Chemistry, The University of Hong Kong, Pokfulam Road (Hong Kong)
The carrier mobility of pentacene thin-film transistor is studied by passivating the surface of its SiO{sub 2} gate dielectric in NH{sub 3} at different temperatures, namely, 900, 1000, 1100, and 1150 deg. C. Measurements demonstrate that the higher the annealing temperature, the higher the carrier mobility of the OTFT is. The device annealed at 1150 deg. C has a field-effect mobility of 0.74 cm{sup 2}/V s, which is 35% higher than that of the device annealed at 900 deg. C. Energy-dispersive x-ray analysis, scanning-electron microscopy, and atomic-force microscopy show that the higher carrier mobility should be due to more nitrogen incorporated at the gate-dielectric surface which results in more passivated dielectric surface and larger pentacene grains for carrier transport.
- OSTI ID:
- 21180012
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 11; Other Information: DOI: 10.1063/1.3040004; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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