Increased mobility and on/off ratio in organic field-effect transistors using low-cost guanine-pentacene multilayers
- Johns Hopkins Univ., Baltimore, MD (United States); Univ. of Electronic Science and Technology of China, Chengdu (China); DOE/OSTI
- Univ. of Electronic Science and Technology of China, Chengdu (China); Yale Univ., New Haven, CT (United States)
- Yale Univ., New Haven, CT (United States)
- Univ. of Electronic Science and Technology of China, Chengdu (China)
- Johns Hopkins Univ., Baltimore, MD (United States)
Layer-by-layer deposited guanine and pentacene in organic field-effect transistors (OFETs) is introduced. Through adjusting the layer thickness ratio of guanine and pentacene, the tradeoff of two electronic parameters in OFETs, charge carrier mobility and current on/off ratio, was controlled. The charge mobility was enhanced by depositing pentacene over and between guanine layers and by increasing the proportion of pentacene in the layer-by-layer system, while the current on/off ratio was increased via the decreased off current induced by the guanine layers. The tunable device performance was mainly ascribed to the trap and dopant neutralizing properties of the guanine layers, which would decrease the density of free hydroxyl groups in the OFETs. Furthermore, the cost of the devices could be reduced remarkably via the adoption of low-cost guanine.
- Research Organization:
- Johns Hopkins Univ., Baltimore, MD (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- FG02-07ER46465
- OSTI ID:
- 1535332
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 111; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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