In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)

Journal Article · Mon Mar 06 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2186106· OSTI ID:20778783

Takahasi, Masamitu; Kaizu, Toshiyuki; Mizuki, Jun'ichiro ^[1]

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1. Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute, Mikazuki-cho, Hyogo 679-5148 (Japan)

A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of synchrotron radiation, x-ray diffraction intensity mapping in reciprocal space has been measured during growth. The internal strain distribution and height of the Stranski-Krastanov islands were monitored at a temporal resolution of 9.6 s. The relaxation process of internal strain inside the Stranski-Krastanov islands displayed significant dependence on the growth temperature.

• OSTI ID: 20778783
• Journal Information: Applied Physics Letters, Vol. 88, Issue 10; Other Information: DOI: 10.1063/1.2186106; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DISTRIBUTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
MAGNETIC ISLANDS
MAPPING
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
RESOLUTION
SEMICONDUCTOR MATERIALS
STRAINS
STRESS RELAXATION
SYNCHROTRON RADIATION
X-RAY DIFFRACTION