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Title: Thin film deposition on powder surfaces using atmospheric pressure discharge

Abstract

The deposition of SiOx containing films on NaCl and KBr particles in dielectric barrier discharge under atmospheric pressure was investigated. As precursor hexamethyldisiloxane (HMDSO) and tetraethoxysilane (TEOS) in argon-oxygen gas mixtures were used. The deposited layers were studied by means of light microscopy, SEM and XPS investigations. The particles could be completely covered by SiOx. With increasing oxygen content in the coating the carbon content decreases.

Authors:
; ;  [1]
  1. Institute for Low Temperature Plasma Physics, F.-L.-Jahn-Str.19, 17489 Greifswald (Germany)
Publication Date:
OSTI Identifier:
20726784
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 799; Journal Issue: 1; Conference: 4. international conference on the physics of dusty plasmas, Orleans (France), 13-17 Jun 2005; Other Information: DOI: 10.1063/1.2134635; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ARGON; ATMOSPHERIC PRESSURE; CARBON; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC DISCHARGES; MIXTURES; OXYGEN; OXYGEN COMPOUNDS; PARTICLES; PLASMA; POTASSIUM BROMIDES; POWDERS; PRECURSOR; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SODIUM CHLORIDES; SURFACES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Brueser, V., Haehnel, M., and Kersten, H.. Thin film deposition on powder surfaces using atmospheric pressure discharge. United States: N. p., 2005. Web. doi:10.1063/1.2134635.
Brueser, V., Haehnel, M., & Kersten, H.. Thin film deposition on powder surfaces using atmospheric pressure discharge. United States. doi:10.1063/1.2134635.
Brueser, V., Haehnel, M., and Kersten, H.. Mon . "Thin film deposition on powder surfaces using atmospheric pressure discharge". United States. doi:10.1063/1.2134635.
@article{osti_20726784,
title = {Thin film deposition on powder surfaces using atmospheric pressure discharge},
author = {Brueser, V. and Haehnel, M. and Kersten, H.},
abstractNote = {The deposition of SiOx containing films on NaCl and KBr particles in dielectric barrier discharge under atmospheric pressure was investigated. As precursor hexamethyldisiloxane (HMDSO) and tetraethoxysilane (TEOS) in argon-oxygen gas mixtures were used. The deposited layers were studied by means of light microscopy, SEM and XPS investigations. The particles could be completely covered by SiOx. With increasing oxygen content in the coating the carbon content decreases.},
doi = {10.1063/1.2134635},
journal = {AIP Conference Proceedings},
number = 1,
volume = 799,
place = {United States},
year = {Mon Oct 31 00:00:00 EST 2005},
month = {Mon Oct 31 00:00:00 EST 2005}
}
  • The stabilization of a homogeneous glow discharge at atmospheric pressure has been studied since 1987. On flat surfaces, various plasma surface treatments and film depositions at atmospheric pressure have been examined. A practical application of the atmospheric pressure glow plasma on inner surfaces of flexible polyvinyl chloride tubes was tested for thin film deposition of polytetrafluoroethylene. Deposited film surfaces were characterized by ESCA and FT-IR/ATR measurements. Also SEM observation was done for platelet adhesion on the plasma treated polyvinyl chloride surface. These results showed remarkable enhancement in the inhibition to platelet adhesion on the inner surface of PVC tube, andmore » homogeneous organic film deposition was confirmed. The deposition mechanism of polytetrafluoroethylene film in atmospheric pressure glow plasma is the same as the mechanism of film formation in the low pressure glow plasma, except for radical formation source. {copyright} {ital 1996 American Institute of Physics.}« less
  • SiO{sub X} thin films were deposited using a gas mixture of hexamethyldisilazane (HMDS)/O{sub 2}/He/Ar from a remote-type dielectric barrier discharges (DBD) source, with/without the additional direct-type DBD just above the substrate (double discharge), and the effect of the double discharge on the characteristics of the SiO{sub X} thin film was investigated. The increase of HMDS flow rate and the decrease of oxygen flow rate in the gas mixture increased the SiO{sub X}-thin-film deposition rate. The improvement of the mechanical properties for SiO{sub X} film, in addition to the increase of deposition rate, is believed to be related not only tomore » the higher gas dissociation because of the higher power deposition but also to the lesser recombination of oxygen atoms and dissociated HMDS due to the shorter diffusion length to the substrate.« less
  • A medium-frequency dielectric barrier discharge (DBD) plasma gun was used to deposit SiO{sub 2}-like films at ambient temperature under atmospheric pressure. SiO{sub 2}-like films were deposited on Si and stainless-steel surfaces by flowing Ar gas containing hexamethyldisiloxane (HMDSO) monomer through the gun. The authors found that the chemical structure of the deposited SiO{sub 2}-like film strongly depended on the HMDSO monomer ratio in the flowing gas and on the incident power. Fourier transform infrared spectroscopy showed no hydroxyl group in the chemical structure under the low HMDSO ratio in flowing gas or high incident plasma power. Scanning electron microscopy andmore » atomic force microscopy revealed that SiO{sub 2}-like films began to grow as islands and then formed in columns having porosity. Oxygen added to the plasma-gun flow plays a lesser role in the SiO{sub 2}-like deposition from a DBD plasma gun at atmospheric pressure, and the critical temperature for pure SiO{sub 2} formation is also greatly lowered.« less
  • In an attempt to prepare TiN, the amido- and imidotitanium(IV) complexes Ti(NR{sub 2}){sub 4} (R = Me or Et), Ti(NMe{sub 2}){sub 3}(t-Bu), and (Ti({mu}-N-t-Bu)(NMe{sub 2}){sub 2}){sub 2} were used as precursors in an atmospheric pressure chemical vapor deposition process. Depositions on glass, silicon, vitreous carbon, and boron substrates were successfully carried out at temperatures below 450{degree}C to give coatings up to 6,000 {angstrom} thick and growth rates from 50 to 1,000 {angstrom}/min. The films, which were characterized by electron microprobe and Rutherford backscattering, contained titanium and nitrogen in a ratio close to 1, plus significant amounts of carbon and oxygen.
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