Development of a Nuclear Reaction Database on Silicon for Simulation of Neutron-Induced Single-Event Upsets in Microelectronics and its Application

Journal Article · Tue May 24 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1945323· OSTI ID:20722507

Watanabe, Yukinobu; Kodama, Akihiro; Tukamoto, Yasuyuki; Nakashima, Hideki ^[1]

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1. Department of Advanced Energy Engineering Science, Kyushu University, Kasuga, Fukuoka, 816-8580 (Japan)

We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed.

• OSTI ID: 20722507
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 769; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
COMPUTERIZED SIMULATION
CROSS SECTIONS
GEV RANGE
INTEGRATED CIRCUITS
MEMORY DEVICES
MEV RANGE
MICROELECTRONICS
NEUTRON REACTIONS
NUCLEAR DATA COLLECTIONS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
SILICON 28