Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films

Journal Article · Tue Nov 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2132088· OSTI ID:20719800

Abbas, G A; Papakonstantinou, P; McLaughlin, J A; Weijers-Dall, T D.M.; Elliman, R G; Filik, J ^[1]

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1. Nanotechnology Research Institute, School of Electrical and Mechanical Engineering, University of Ulster, Shore road, Newtownabbey BT37 0QB, Northern Ireland (United Kingdom)

High-resolution x-ray reflectivity (XRR) and heavy-ion elastic recoil detection were employed to study the role of hydrogen on the softening behavior observed in Si-incorporated hydrogenated amorphous carbon (Si-a-C:H) films synthesized by plasma-enhanced chemical-vapor deposition using tetramethylsilane (TMS) precursor in C{sub 2}H{sub 2}/Ar plasma. An enhancement of the optical band gap and a massive reduction in the density of the films prepared at high TMS flow rate were revealed, respectively, by spectroscopic ellipsometry and XRR analysis with the development of a double critical angle. A hydrogenation process was responsible for a rise in the density of voids and an associated reduction in the connectivity of the carbon network and the release of its residual stress.

• OSTI ID: 20719800
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACETYLENE
AMORPHOUS STATE
ARGON
CARBON
CHEMICAL VAPOR DEPOSITION
ELLIPSOMETRY
FLOW RATE
HEAVY IONS
HYDROGEN
OPACITY
PLASMA
RECOILS
REFLECTION
REFLECTIVITY
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
X RADIATION