Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H-SiC

Journal Article · Sun May 15 00:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.71.193204· OSTI ID:20719011

Kawasuso, A; Chiba, T; Higuchi, T ^[1]

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1. Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233, Watanuki, Takasaki, Gunma, 370-1292 (Japan)

Electron-positron momentum distributions associated with vacancy defects in 6H-SiC after irradiation with 2-MeV electrons and annealing at 1000 deg. C have been studied using angular correlation of annihilation radiation measurements. It was confirmed that the above vacancy defects have dangling bonds along the c axis and the rotational symmetry around it. The first-principles calculation suggested that the vacancy defects are attributable to either carbon-vacancy-carbon-antisite complexes or silicon-vacancy-nitrogen pairs, while isolated carbon vacancies, silicon vacancies, and nearest neighbor divacancies are ruled out.

• OSTI ID: 20719011
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 19; Other Information: DOI: 10.1103/PhysRevB.71.193204; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANGULAR CORRELATION
ANNEALING
ANNIHILATION
CARBON
ELECTRONS
HYDROGEN 6
IRRADIATION
MEV RANGE
NITROGEN
PHYSICAL RADIATION EFFECTS
POSITRONS
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
VACANCIES