Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H-SiC
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233, Watanuki, Takasaki, Gunma, 370-1292 (Japan)
Electron-positron momentum distributions associated with vacancy defects in 6H-SiC after irradiation with 2-MeV electrons and annealing at 1000 deg. C have been studied using angular correlation of annihilation radiation measurements. It was confirmed that the above vacancy defects have dangling bonds along the c axis and the rotational symmetry around it. The first-principles calculation suggested that the vacancy defects are attributable to either carbon-vacancy-carbon-antisite complexes or silicon-vacancy-nitrogen pairs, while isolated carbon vacancies, silicon vacancies, and nearest neighbor divacancies are ruled out.
- OSTI ID:
- 20719011
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 71; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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