EPR and ab initio calculation study on the EI4 center in 4H- and 6H-SiC

Journal Article · Wed Dec 15 00:00:00 EST 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.82.235203· OSTI ID:21502911

Carlsson, P; Son, N T; Janzen, E ^[1]; Gali, A ^[2]; Isoya, J ^[3]; Morishita, N; Ohshima, T ^[4]; Magnusson, B ^[5]

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1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
2. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8., H-1111 Budapest (Hungary)
3. Graduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550 (Japan)
4. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
5. Norstel AB, Ramshaellsvaegen 15, SE-602 38 Norrkoeping (Sweden)

We present results from electron paramagnetic resonance (EPR) studies of the EI4 EPR center in 4H- and 6H-SiC. The EPR signal of the EI4 center was found to be drastically enhanced in electron-irradiated high-purity semi-insulating materials after annealing at 700-750 deg. C. Strong EPR signals of the EI4 center with minimal interferences from other radiation-induced defects in irradiated high-purity semi-insulating materials allowed our more detailed study of the hyperfine (hf) structures. An additional large-splitting {sup 29}Si hf structure and {sup 13}C hf lines of the EI4 defect were observed. Comparing the data on the hf interactions and the annealing behavior obtained from EPR experiments and from ab initio supercell calculations of different carbon-vacancy-related complexes, we suggest a complex between a carbon vacancy-carbon antisite and a carbon vacancy at the third-neighbor site of the antisite in the neutral charge state, (V{sub C}-C{sub Si}V{sub C}){sup 0}, as a new defect model for the EI4 center.

• OSTI ID: 21502911
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 82, Issue 23; Other Information: DOI: 10.1103/PhysRevB.82.235203; (c) 2010 The American Physical Society; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARBON
CARBON 13
CRYSTAL DEFECTS
ELECTRON SPIN RESONANCE
ELECTRONS
HYPERFINE STRUCTURE
IMPURITIES
INTERACTIONS
INTERFERENCE
SILICON 29
SILICON CARBIDES
VACANCIES
CARBIDES
CARBON COMPOUNDS
CARBON ISOTOPES
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
EVEN-ODD NUCLEI
FERMIONS
HEAT TREATMENTS
ISOTOPES
LEPTONS
LIGHT NUCLEI
MAGNETIC RESONANCE
NONMETALS
NUCLEI
POINT DEFECTS
RESONANCE
SILICON COMPOUNDS
SILICON ISOTOPES
STABLE ISOTOPES