Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC

Hu, Xunxiang; Koyanagi, Takaaki; Katoh, Yutai; Wirth, Brian D.

doi:10.1103/PhysRevB.95.104103

Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated $3 C$ -SiC

Journal Article · Fri Mar 10 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.104103· OSTI ID:1360051

Hu, Xunxiang ^[1]; Koyanagi, Takaaki ^[1]; Katoh, Yutai ^[1]; Wirth, Brian D. ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

We described positron annihilation spectroscopy characterization results for neutron-irradiated 3 C -SiC, with a specific focus on explaining the size and character of vacancy clusters as a complement to the current understanding of the neutron irradiation response of 3 C -SiC. Positron annihilation lifetime spectroscopy was used to capture the irradiation temperature and dose dependence of vacancy defects in 3 C -SiC following neutron irradiation from 0.01 to 31 dpa in the temperature range from 380C °to 790C .° The neutral and negatively charged vacancy clusters were identified and quantified. The results suggest that the vacancy defects that were measured by positron annihilation spectroscopy technique contribute very little to the transient swelling of SiC. Additionally, we used coincidence Doppler broadening measurement to investigate the chemical identity surrounding the positron trapping sites.Finally, we found that silicon vacancy-related defects dominate in the studied materials and the production of the antisite defect C_Si may result in an increase in the probability of positron annihilation with silicon core electrons.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Fusion Energy Sciences (FES) (SC-24)

Grant/Contract Number:: AC05-00OR22725; SC0006661

OSTI ID:: 1360051

Alternate ID(s):: OSTI ID: 1346582

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 10 Vol. 95; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Size-dependent toughness and strength in defective 3C-SiC nanowires Ma, Ling; Hao, Tengyuan; Hossain, Zubaer M. Journal of Applied Physics, Vol. 126, Issue 16 https://doi.org/10.1063/1.5120034	journal	October 2019

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