Characteristics of a Zn{sub 0.7}Mg{sub 0.3}O/ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy

Journal Article · Mon Sep 12 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2045558· OSTI ID:20709753

Koike, Kazuto; Nakashima, Ippei; Hashimoto, Kazuyuki; Sasa, Shigehiko; Inoue, Masataka; Yano, Mitsuaki ^[1]

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1. New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585 (Japan)

Characterization of a Zn{sub 0.7}Mg{sub 0.3}O/ZnO heterostructure field-effect transistor (HFET) is reported. The HFET was based on a Zn{sub 0.7}Mg{sub 0.3}O/ZnO/Zn{sub 0.7}Mg{sub 0.3}O single quantum well (SQW) grown on an a-plane sapphire substrate by molecular-beam epitaxy, and was fabricated by a conventional photolithography technique combined with dry etching. Room-temperature characteristic of the HFET was a n-channel depletion type with a transconductance of 0.70 mS/mm and a field-effect mobility of 140 cm{sup 2}/V s, in good agreement with the electron Hall mobility in SQW of 130 cm{sup 2}/V s. The on/off ratio at V{sub DS}=3 V was {approx}800, which was limited by an insufficiently suppressed leakage current through the bottom Zn{sub 0.7}Mg{sub 0.3}O barrier.

• OSTI ID: 20709753
• Journal Information: Applied Physics Letters, Vol. 87, Issue 11; Other Information: DOI: 10.1063/1.2045558; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
CRYSTAL GROWTH
ELECTRONS
ETCHING
FIELD EFFECT TRANSISTORS
HALL EFFECT
LEAKAGE CURRENT
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES