Increased field-emission site density from regrown carbon nanotube films
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density ({approx}20 {mu}A/cm{sup 2} at 1 V/{mu}m), while the regrown sample exhibited a significantly increased emission site density.
- OSTI ID:
- 20709667
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 10; Other Information: DOI: 10.1063/1.1897836; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Etched-and-Regrown GaN pn -Diodes With 1600 V Blocking Voltage
Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis