Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2012519· OSTI ID:20702595

Trivedi, R A; Tolle, J; Chizmeshya, A V.G.; Roucka, R; Ritter, Cole; Kouvetakis, J; Tsong, I S.T. ^[1]

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1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States)

We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a ZrB{sub 2}(0001) buffer layer. The method utilizes the decomposition of a single gas-source precursor (D{sub 2}GaN{sub 3}){sub 3} on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of 550 deg. C with a growth rate of 3 nm/min. The films exhibit intense photoluminescence emission at 10 K with a single peak at 3.48 eV, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on ZrB{sub 2} in contrast to conventional metalorganic chemical vapor deposition based approaches.

• OSTI ID: 20702595
• Journal Information: Applied Physics Letters, Vol. 87, Issue 7; Other Information: DOI: 10.1063/1.2012519; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DECOMPOSITION
EPITAXY
EV RANGE 01-10
EXCITATION
FILMS
GALLIUM NITRIDES
IRRADIATION
LAYERS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0400-1000 K
ULTRAVIOLET RADIATION
ZIRCONIUM BORIDES