Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99
Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited {approximately} 0.2 deg crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H- SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM approx. 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM approx. 4 meV).
- Research Organization:
- North Carolina State Univ., Raleigh, NC (US)
- OSTI ID:
- 20005944
- Report Number(s):
- ADA-368020/XAB; Contract N00014-98-1-0384; TRN: IM200006%%36
- Resource Relation:
- Other Information: PBD: Sep 1999
- Country of Publication:
- United States
- Language:
- English
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