Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz
The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of {alpha}-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic {alpha}-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1x10{sup 14}-1x10{sup 16} ions/cm{sup 2} and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10{sup 15} implanted Ge ions/cm{sup 2}, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.
- OSTI ID:
- 20702568
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 2; Other Information: DOI: 10.1063/1.1994953; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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