Cathodoluminescence versus dynamical epitaxy of Ba-ion irradiated {alpha}-quartz

Journal Article · Mon Aug 23 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1784538· OSTI ID:20632739

Dhar, S; Gasiorek, S; Sahoo, P K; Vetter, U; Hofsaess, H; Kulkarni, V N; Lieb, K P ^[1]

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1. II. Physikalisches Institut, Universitaet Goettingen, Tammannstrasse 1, D-37077 Goettingen (Germany)

Doping {alpha}-quartz with photoactive ions without destroying its crystalline structure appears to be a promising way to tune its luminescent and structural properties. We have achieved dynamic solid phase epitaxial regrowth and cathodoluminescence of 175 keV Ba-ion irradiated {alpha}-quartz in the temperature range from 300 to 1170 K. Rutherford Backscattering Channeling analysis showed that the amorphous layer produced by 1x10{sup 15} Ba ions/cm{sup 2} at 300 K had almost disappeared at an implantation temperature of 1123 K. Room temperature cathodoluminescence exhibited dramatic changes in the optical spectra as a function of the implantation temperature and allowed to distinguish between color centers related to quartz, ion-irradiated silica and implanted Ba. Between 770 and 1100 K, room-temperature cathodoluminescence showed a predominant blue and other weak bands connected to various known defects in the {identical_to}Si-O-Si{identical_to} network. However, after achieving almost complete solid phase epitaxial recovery, only a violet band at 3.4 eV remained, which we attribute to Ba-related luminescence centers.

• OSTI ID: 20632739
• Journal Information: Applied Physics Letters, Vol. 85, Issue 8; Other Information: DOI: 10.1063/1.1784538; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BARIUM IONS
CATHODOLUMINESCENCE
COLOR CENTERS
EPITAXY
EV RANGE 01-10
ION BEAMS
ION IMPLANTATION
IRRADIATION
KEV RANGE 100-1000
QUARTZ
RECRYSTALLIZATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICA
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K