Cathodoluminescence and solid phase epitaxy in Ba-irradiated {alpha}-quartz

Journal Article · Sat Jan 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1829791· OSTI ID:20664981

Dhar, S; Sahoo, P K; Gasiorek, S; Vetter, U; Kulkarni, V N; Lieb, K P ^[1]

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1. II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund Platz 1, D-37077 Goettingen (Germany)

The luminescent properties of quartz and silica doped with photoactive ions depend on the structural and chemical properties of the matrix and doping elements. The dynamic solid phase epitaxy of {alpha}-quartz during Ba{sup +}-ion implantation at 300-1170 K and its relationship to cathodoluminescence emission are investigated in this work. Rutherford backscattering channeling analysis revealed that the amorphous layer created by 1x10{sup 15} 175 keV Ba ions/cm{sup 2} at 300 K almost disappeared when the implantation temperature was raised to 1120 K. Between 770 and 1100 K the cathodoluminescence spectra taken at room temperature exhibit dramatic changes with the implantation temperature and allow to distinguish between color centers related to quartz, ion-irradiated silica, and implanted Ba ions. After achieving almost complete epitaxial recovery, only a violet band at 3.4 eV remained, which we attribute to Ba-related luminescence centers. Samples first implanted with Ba ions and then postannealed in air or {sup 18}O{sub 2} atmosphere up to 1320 K did not show full epitaxy of the amorphized layer.

• OSTI ID: 20664981
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 1; Other Information: DOI: 10.1063/1.1829791; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ANNEALING
ATMOSPHERES
BARIUM IONS
CATHODOLUMINESCENCE
CHEMICAL PROPERTIES
COLOR CENTERS
DOPED MATERIALS
EPITAXY
ION BEAMS
ION IMPLANTATION
IRRADIATION
KEV RANGE 100-1000
LAYERS
OXYGEN 18
QUARTZ
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICA
TEMPERATURE RANGE 0273-0400 K
THIN FILMS