Energy dependence of majority carrier defect introduction rates in p{sup +} n GaAs photodiodes irradiated with protons

Journal Article · Wed Dec 15 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1814806· OSTI ID:20662218

Warner, J H; Summers, G P; Walters, R J; Messenger, S R ^[1]

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1. US Naval Research Laboratory, Washington, DC 20375 (United States)

Traps introduced into p{sup +} n GaAs diodes, grown by molecular beam epitaxy, by room temperature irradiation with 1, 4, 10, 50, and 53 MeV protons, have been studied using deep--level transient spectroscopy. Five distinct majority carrier (electron) traps were observed after irradiation. The activation energies, capture cross sections, and introduction rates of the traps were measured. Good agreement was found between the energy dependence of the introduction rates for each trap and the calculated elastic nonionizing energy loss for protons incident upon GaAs (i.e., excluding the effects of inelastic nuclear interactions)

• OSTI ID: 20662218
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 12; Other Information: DOI: 10.1063/1.1814806; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CAPTURE
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
ENERGY DEPENDENCE
ENERGY LOSSES
GALLIUM ARSENIDES
IRRADIATION
LAYERS
MEV RANGE 01-10
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
PHOTODIODES
PROTONS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TRAPS