Irradiation-induced defects in p-italic-type GaAs

Journal Article · Mon Sep 15 04:00:00 EDT 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.34.4048· OSTI ID:5061023

Stievenard, D; Boddaert, X; Bourgoin, J C

Electron irradiation at room temperature in p-italic-type vapor-phase-epitaxy-grown GaAs produces a series of traps labeled H-italic0, H-italic1, H-italic2, H-italic3, H-italic4, and H-italic5 situated at, respectively, 0.06, 0.25, 0.42, 0.54, 0.79, and 0.85 eV above the valence-band maximum E-italic/sub v-italic/. Their introduction rates as a function of the energy of irradiation and their annealing behavior have been studied using deep-level transient spectroscopy. From a comparison of the introduction rate and the annealing kinetics of H-italic1 with electron traps produced by irradiation in n-italic-type material, we deduced that this trap is associated with the arsenic vacancy-interstitial pair. The other traps (H-italic2, H-italic3, H-italic4, and H-italic5) are complexes of impurities with the arsenic interstitial, I-italic/sub As/, due to the fact that I-italic/sub As/ is mobile under irradiation. From the annealing kinetics of these defects we deduce the activation energy associated with the I-italic/sub As/ mobility (0.5 +- 0.15 eV) in p-italic-type GaAs. Finally, we also demonstrate that the E-italic traps situated at 0.045, 0.140, 0.30 eV below the conduction-band minimum (labeled E-italic1, E-italic2, E-italic3, respectively) present in electron-irradiated n-italic-type GaAs are also present in p-italic-type material and we have verified that these defects have the thermal stability expected from studies in n-italic-type GaAs, i.e., associated with the charge-state effect.

• Research Organization: Laboratoire de Physique des Solides, Institut Supe-acute-accentrieur d'Electronique du Nord, 41 boulevard Vauban, 59046 Lille Ce-acute-accentdex, France
• OSTI ID: 5061023
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 34:6; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRONS
ELEMENTARY PARTICLES
ENERGY
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERSTITIALS
KINETICS
LEPTONS
MATERIALS
MEDIUM TEMPERATURE
P-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
TRAPS
VACANCIES
VAPOR PHASE EPITAXY