Structural and magnetic properties of insulating Zn{sub 1-x}Co{sub x}O thin films

Journal Article · Mon Nov 01 04:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1756212· OSTI ID:20662147

Zhigang, Yin; Nuofu, Chen; Chunlin, Chai; Fei, Yang ^[1]

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1. Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Cobalt-doped ZnO (Zn{sub 1-x}Co{sub x}O) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn{sub 1-x}Co{sub x}O films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07<x<0.17. Most intriguing, the Zn{sub 1-x}Co{sub x}O films are nonconductive as x is no more than 17%. Our results clearly demonstrate that ferromagnetism can be realized in Zn{sub 1-x}Co{sub x}O without carrier incorporation.

• OSTI ID: 20662147
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT
COBALT IONS
COPRECIPITATION
DOPED MATERIALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
HYSTERESIS
MAGNETIC PROPERTIES
MAGNETIZATION
MAGNETRONS
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SOLUBILITY
SPUTTERING
SURFACE COATING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES