Photoluminescence and deep levels in lattice-matched InGaAsN/GaAs

Journal Article · Fri Oct 15 04:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1791757· OSTI ID:20662106

Fischer, C H; Bhattacharya, P ^[1]

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1. Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48103-2122 (United States)

Temperature-dependent photoluminescence measurements and deep level transient spectroscopy have been made to identify defects and deep level traps in InGaAsN alloys lattice-matched to GaAs. The epitaxial layers were grown by molecular beam epitaxy at different substrate temperatures. Defect levels responsible for the quenching of luminescence with increase of temperature have been identified. Several electron trap levels have been identified and characterized in the alloys. The concentrations of all of these increase with N content in the alloy. A dominant center, with an activation energy of E{sub T}=0.44 eV, is present in all the samples and its concentration is inversely proportional to photoluminescence intensity. H{sub 2}O and O present in the source nitrogen are believed to be responsible for the presence of this trap, which also has characteristics similar to the E3 and E4 levels in molecular beam epitaxial GaAs.

• OSTI ID: 20662106
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
QUENCHING
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TRAPS
WATER