Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2208996· OSTI ID:20777315

Lai, F -I; Kuo, S Y; Wang, J S; Kuo, H C; Wang, S C; Wang, H S; Liang, C T; Chen, Y F ^[1]

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1. Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Road, Jung-Li, 320 Taiwan (China)

A series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak position was observed in PL spectra while increasing the nitrogen concentration. Quenching behavior reveals that the defect-related nonradiative processes might be enhanced in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak position of the InGaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the electronic structure of III-N-V alloys.

• OSTI ID: 20777315
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN
OPTICAL PROPERTIES
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
RECOMBINATION
TEMPERATURE DEPENDENCE