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Title: Zernike-type phase contrast X-ray microscopy at 4 keV photon energy with 60 nm resolution

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.1758028· OSTI ID:20652854
 [1];  [2]
  1. European Synchrotron Radiation Facility (ESRF), BP 220, 38043 Grenoble Cedex (France)
  2. BESSY, Albert-Einstein-Str. 15, 12489 Berlin (Germany)

X-ray microscopy in the multi-keV photon energy range offers unique possibilities to study thick dense samples with high spatial resolution. When employing a high numerical aperture (N.A.) condenser zone plate sample illumination in combination with a high resolution micro zone plate objective lens, a spatial resolution of currently 60 nm is achieved. Since the absorption becomes smaller with increasing photon energy, phase contrast imaging overcomes the limitation for imaging weakly absorbing structures in amplitude contrast mode. We report here on X-ray microscopy of advanced microelectronic devices imaged in Zernike phase contrast mode. While the amplitude contrast between copper and silicon dioxide in these samples is only 7 %, negative as well as positive phase contrast were demonstrated with a contrast of 40 % and 45 %, respectively.

OSTI ID:
20652854
Journal Information:
AIP Conference Proceedings, Vol. 705, Issue 1; Conference: 8. international conference on synchrotron radiation instrumentation, San Francisco, CA (United States), 25-29 Aug 2003; Other Information: DOI: 10.1063/1.1758028; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English