Antiphase state in passively Q-switched Yb:YAG microchip multimode lasers with a saturable absorber GaAs

Journal Article · Sat May 01 04:00:00 EDT 2004 · Physical Review. A

DOI:https://doi.org/10.1103/PhysRevA.69.053815· OSTI ID:20643685

Qiulin, Zhang; Baohua, Feng; Dongxiang, Zhang; Panming, Fu; Zhiguo, Zhang; Zhiwei, Zhao; Peizhen, Deng; Jun, Xu; Xiaodong, Xu; Yonggang, Wang; Xiaoyu, Ma ^[1]

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1. Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.

• OSTI ID: 20643685
• Journal Information: Physical Review. A, Journal Name: Physical Review. A Journal Issue: 5 Vol. 69; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ABSORPTION
ALUMINIUM COMPOUNDS
COMPUTERIZED SIMULATION
GALLIUM ARSENIDES
GARNETS
NONLINEAR PROBLEMS
NUMERICAL ANALYSIS
OPTICAL MODES
OPTICAL PUMPING
PULSES
Q-SWITCHING
YTTERBIUM ADDITIONS
YTTRIUM COMPOUNDS