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Diode-pumped passively Q-switched high-repetition-rate Yb microchip laser

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ;  [1]
  1. Research Institute of Optical Materials and Technologies, Belarussian National Technical University, Minsk (Belarus)

The system of balance equations is modified for quasi-three-level passively Q-switched lasers with a slow saturable absorber. Optimal parameters of a Yb{sup 3+}:YAG microchip laser with a passive Cr{sup 4+}:YAG Q switch are calculated at a pulse repetition rate of {approx}100 kHz. The single-mode operation of the Yb:YAG-Cr:YAG laser with a pulse repetition rate above 100 kHz, the average output power 0.45 W and peak power 1.5 kW is experimentally demonstrated. In the multimode lasing regime, pulses with a peak power of 4.2 kW are obtained at an average output power of 0.8 W and a pulse repetition rate of 10 kHz. (lasers)

OSTI ID:
21467069
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 11 Vol. 39; ISSN 1063-7818
Country of Publication:
United States
Language:
English