Generation of controllable Ince – Gaussian modes in a passively Q-switched microchip laser under truncated decentred Gaussian beam pumping
- Laboratory of Laser and Applied Photonics (LLAP), Department of Electronic Engineering, College of Electronic Science and Technology, Xiamen University, Xiamen 361005 (China)
- Department of Automation, Tsinghua University, Beijing 100084 (China)
We report a passively Q-switched (PQS) Nd : YAG/Cr{sup 4+}: YAG microchip laser pumped by a truncated decentred Gaussian beam for controllable Ince – Gaussian (IG) mode generation. IG{sup e}(n, n) modes (n = 0, …, 4) are obtained experimentally by choosing the appropriate truncation parameter, which is defined as a ratio of the radius of the aperture to the beam waist. The IG{sup e}(4, 4) mode is produced in the PQS Nd : YAG/Cr{sup 4+}: YAG microchip laser under decentred Gaussian beam pumping at a pump power of 2.6 W, the mode selection being achieved by reducing the truncation parameter. The threshold pump powers for different IG{sup e}(n, n) modes are theoretically calculated to illustrate the mode selection process. The pulsed IG{sup e}(n, n) (n ≥ 1) mode generation with a peak power exceeding 1 kW and a nanosecond pulse width is obtained in the PQS microchip laser, which is a potential laser source for forming flexible vortex arrays for optical tweezers. (control of laser radiation parameters)
- OSTI ID:
- 23004901
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 3 Vol. 49; ISSN 1063-7818; ISSN QUELEZ
- Country of Publication:
- United States
- Language:
- English
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