Structure and electrical properties of MgTiO{sub 3} thin films deposited by rf magnetron sputtering

Journal Article · Mon Nov 01 04:00:00 EST 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1810164· OSTI ID:20636786

Huang, C -L; Pan, C -L ^[1]

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1. Department of Electrical Engineering, National Cheng Kung University, no. 1 University Road, Tainan 70101, Taiwan (China)

Bulk MgTiO{sub 3} ceramics have shown excellent dielectric properties at microwave frequencies; however, the high sintering temperature of the bulk materials is major obstacle in their use as dielectric resonators to miniaturize microwave circuits. In this article, MgTiO{sub 3} thin films were fabricated on n-type Si(100) substrates by rf magnetron sputtering by using MgTiO{sub 3} target which was synthesized in the experiment. It was possible to obtain highly oriented MgTiO{sub 3}(110) thin film at a rf power density of 7.7 W/cm{sup 2} and a substrate temperature of 400 deg. C, which is much lower than the bulk sintering temperature. These films were studied by choosing different rf power densities and substrate temperature. The microstructure and surface morphology of the MgTiO{sub 3} films deposited on Si(100) was determined by x-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the rf power density and substrate temperature. The electrical properties were measured using C-V and current-voltage I-V measurements on metal-insulator-semiconductor capacitor structures. As rf power density of 7.7 W/cm{sup 2} and substrate temperature of 400 deg. C, a dielectric constant of 14.9 (f=10 MHz) and a dissipation factor of 0.031 were obtained.

• OSTI ID: 20636786
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CERAMICS
DIELECTRIC MATERIALS
DISSIPATION FACTOR
MAGNESIUM COMPOUNDS
MAGNETRONS
MHZ RANGE 01-100
PERMITTIVITY
POLYCRYSTALS
RADIOWAVE RADIATION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
TITANATES
X-RAY DIFFRACTION