Low temperature rf sputtering deposition of (Ba, Sr) TiO{sub 3} thin film with crystallization enhancement by rf power supplied to the substrate

Journal Article · Sun May 01 04:00:00 EDT 2005 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1901676· OSTI ID:20637102

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi ^[1]

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1. System LSI Research Division, Silicon Solution Company, Oki Electric Industry Co., Ltd., 550-1, Higashi-asakawa, Hachioji, Tokyo 193-8550 (Japan)

The (Ba, Sr) TiO{sub 3} thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO{sub 3} sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO{sub 3} film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO{sub 3} film deposited at higher temperatures (upwards of 400 deg. C) shows <110> preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a <111> preferred orientation on a <001>-oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO{sub 3} (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO{sub 3} film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO{sub 3} film on the ruthenium electrode at low temperatures of less than 400 deg. C.

• OSTI ID: 20637102
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 3 Vol. 23; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
BARIUM COMPOUNDS
CRYSTAL GROWTH
CRYSTALLIZATION
DEPOSITION
DIELECTRIC MATERIALS
EPITAXY
GRAIN ORIENTATION
RADIOWAVE RADIATION
SPUTTERING
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
THIN FILMS
TITANATES