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Title: Microwave dielectric properties and sintering behavior of nano-scaled ({alpha} + {theta})-Al{sub 2}O{sub 3} ceramics

Journal Article · · Materials Research Bulletin
 [1]; ;  [2]
  1. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan (China)
  2. Department of Resource Engineering, National Cheng Kung University, Tainan, Taiwan (China)

The dielectric properties at microwave frequencies and the microstructures of nano ({alpha} + {theta})-Al{sub 2}O{sub 3} ceramics were investigated. Using the high-purity nano ({alpha} + {theta})-Al{sub 2}O{sub 3} powders can effectively increase the value of the quality factor and lower the sintering temperature of the ceramic samples. Grain growth can be limited with {theta}-phase Al{sub 2}O{sub 3} addition and high-density alumina ceramics can be obtained with smaller grain size comparing to pure {alpha}-Al{sub 2}O{sub 3}. Relative density of sintered samples can be as high as 99.49% at 1400 deg. C for 8 h. The unloaded quality factors Q x f are strongly dependent on the sintering time. Further improvement of the Q x f value can be achieved by extending the sintering time to 8 h. A dielectric constant ({epsilon}{sub r}) of 10, a high Q x f value of 634,000 GHz (measured at 14 GHz) and a temperature coefficient of resonant frequency ({tau}{sub f}) of -39.88 ppm/deg. C were obtained for specimen sintered at 1400 deg. C for 8 h. Sintered ceramic samples were also characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM)

OSTI ID:
21144021
Journal Information:
Materials Research Bulletin, Vol. 43, Issue 6; Other Information: DOI: 10.1016/j.materresbull.2007.06.032; PII: S0025-5408(07)00277-2; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English