High-temperature annealing and optical activation of Eu-implanted GaN

Journal Article · Mon Oct 04 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1801686· OSTI ID:20634305

Lorenz, K; Wahl, U; Alves, E; Dalmasso, S; Martin, R W; O'Donnell, K P; Ruffenach, S; Briot, O ^[1]

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1. ITN, Estrada Nacional 10, 2686-953 Sacavem (Portugal)

Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300 deg. C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300 deg. C.

• OSTI ID: 20634305
• Journal Information: Applied Physics Letters, Vol. 85, Issue 14; Other Information: DOI: 10.1063/1.1801686; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANNEALING
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CRYSTALS
EPITAXY
EUROPIUM IONS
GALLIUM NITRIDES
ION IMPLANTATION
LAYERS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K