Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489258· OSTI ID:203736

Khanna, S M ^[1]; Jorio, A; Carlone, C; Parenteau, M ^[2]; Houdayer, A ^[3]; Gerdes, Jr, J W ^[4]

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1. Defence Research Establishment Ottawa, Ontario (Canada)
2. Univ. de Sherbrooke, Quebec (Canada). Dept. de Physique
3. Univ. de Montreal, Quebec (Canada). Dept. de Physique
4. Army Pulse Radiation Facility, Aberdeen Proving Ground, MD (United States)

The relative introduction rate of the gallium vacancy in n-type GaAs irradiated with {sup 60}C {gamma} rays, 7 MeV electrons, fusion (14 MeV) and fission (1 MeV) neutrons, protons (0.6 to 200 MeV), deuterons (1 to 10 MeV), {alpha} particles (2.5 to 10 MeV), lithium (5 to 20 MeV) and oxygen ions (10 to 30 MeV) has been determined. Effects of annealing are reported. The measured introduction rates obtained with proton irradiation for energies up to 10 MeV, and for the heavy ions agree reasonably well with Rutherford scattering, NIEL calculations and the TRIM simulation. The results for electron irradiation also agree with the corresponding NIEL calculations.

• OSTI ID: 203736
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
ANNEALING
COBALT 60
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GAMMA RADIATION
HEAVY IONS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
VACANCIES